Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Graphene-silicon Schottky diodes.

We have fabricated graphene-silicon Schottky diodes by depositing mechanically exfoliated graphene on top of silicon substrates. The resulting current-voltage characteristics exhibit rectifying diode behavior with a barrier energy of 0.41 eV on n-type silicon and 0.45 eV on p-type silicon at the room temperature. The I-V characteristics measured at 100, 300, and 400 K indicate that temperature ...

Benefits of Silicon Carbide Schottky Diodes in Boost APFC Operating in CCM

Boost derived Active Power Factor Correction (APFC) imposes high stress on the main diode and main switch due to the high reverse voltage which may result in a very high reverse current. This study analyses the engineering requirements of the diode and transistor in APFC applications and compares a design that uses a fast silicon diode plus lossless snubber to a design with a Silicon Carbide (S...

Boron carbide/n-silicon carbide heterojunction diodes

High Performance Power Diodes on Silicon Carbide and Diamond

Silicon Carbide and diamond Schottky barrier diodes (SBD) with an original and high efficiency termination are presented. The influences of termination parameters on the diodes electrical performance are investigated for both punch-through (PT) and non punch-through (nPT) structures by simulations. Design guidelines, based on simple analytical expressions, for ideal SBDs are included. Electrica...

Charge Transport in Non-Irradiated and Irradiated Silicon Diodes

A model describing the transport of charge carriers generated in silicon detectors (standard planar float zone and MESA diodes) by ionizing particles is presented. The current pulse response induced by and particles in non-irradiated detectors and detectors irradiated up to fluences 3 10 particles/cm is reproduced through this model: i) by adding a small n-type region 15 m deep on the p side fo...